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Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 49, No. 3, pp. 1243-1246
Date:
2005-11-24
Author Information
| Name | Institution |
|---|---|
| Eun-Joo Lee | Hanyang University |
| Myoung-Gyun Ko | Hanyang University |
| Beom-Yong Kim | Hanyang University |
| Sang-Kyun Park | Hanyang University |
| Heon-Do Kim | Hanyang University |
| Jong-Wan Park | Hanyang University |
Films
Plasma La2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Silicon |
Notes
| 1312 |