Publication Information

Title:
Lanthanum-Oxide Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 49, No. 3, pp. 1243-1246
Date:
2005-11-24

Author Information

Name Institution
Eun-Joo LeeHanyang University
Myoung-Gyun KoHanyang University
Beom-Yong KimHanyang University
Sang-Kyun ParkHanyang University
Heon-Do KimHanyang University
Jong-Wan ParkHanyang University

Films

Plasma La2O3

Hardware used: Custom ECR


CAS#: 10028-15-6

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon

Keywords

Notes

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