Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Type:
Journal
Info:
Journal of The Electrochemical Society, 157 (7) H727-H733 (2010)
Date:
2010-04-05
DOI:
http://dx.doi.org/10.1149/1.3421680

Author Information

Name Institution
Sung-Min YoonElectronics and Telecommunication Research Institute, (ETRI)
Sang-Hee Ko ParkElectronics and Telecommunication Research Institute, (ETRI)
Chun-Won ByunElectronics and Telecommunication Research Institute, (ETRI)
Shin-Hyuk YangElectronics and Telecommunication Research Institute, (ETRI)
Chi Sun HwangElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma ZnO

Hardware used: Custom Direct Capacitively Coupled Plasma
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Thermal Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 200C

Thermal Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 200C

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Depletion Layer Width
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4194A

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Substrates

ITO
ZnO
Silicon

Notes

723