Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Type:
Journal
Info:
Journal of The Electrochemical Society, 157 (7) H727-H733 (2010)
Date:
2010-04-05

Author Information

Name Institution
Sung-Min YoonElectronics and Telecommunication Research Institute, (ETRI)
Sang-Hee Ko ParkElectronics and Telecommunication Research Institute, (ETRI)
Chun-Won ByunElectronics and Telecommunication Research Institute, (ETRI)
Shin-Hyuk YangElectronics and Telecommunication Research Institute, (ETRI)
Chi Sun HwangElectronics and Telecommunication Research Institute, (ETRI)

Films

Plasma ZnO


Thermal Al2O3


Thermal Al2O3


Plasma Al2O3


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Depletion Layer Width
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

ITO
ZnO
Silicon

Keywords

Plasma vs Thermal Comparison

Notes

723