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Publication Information

Title: Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications

Type: Journal

Info: Journal of The Electrochemical Society, 157 (7) H727-H733 (2010)

Date: 2010-04-05

DOI: http://dx.doi.org/10.1149/1.3421680

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Films

Deposition Temperature = 200C

557-20-0

7782-44-7

Deposition Temperature = 200C

75-24-1

7732-18-5

Deposition Temperature = 200C

75-24-1

10028-15-6

Deposition Temperature = 200C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Capacitance

C-V, Capacitance-Voltage Measurements

HP 4194A

Interface Trap Density

C-V, Capacitance-Voltage Measurements

HP 4194A

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

HP 4194A

Hysteresis

C-V, Capacitance-Voltage Measurements

HP 4194A

Depletion Layer Width

C-V, Capacitance-Voltage Measurements

HP 4194A

Leakage Current

I-V, Current-Voltage Measurements

HP 4145B Semiconductor Parameter Analyzer

Substrates

ITO

ZnO

Silicon

Keywords

Plasma vs Thermal Comparison

Notes

723

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