Resistive switching in HfO2-based atomic layer deposition grown metal-insulator-metal structures

Type:
Journal
Info:
Applied Surface Science 312 (2014) 112-116
Date:
2014-05-03
DOI:
http://dx.doi.org/10.1016/j.apsusc.2014.05.018

Author Information

Name Institution
Peter JancovicSlovak Academy of Sciences

Films

Thermal HfO2

Hardware used: Beneq TFS-200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 300C

Thermal HfO2

Hardware used: Beneq TFS-200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O3, Ozone
CAS#: 10028-15-6
Deposition Temperature = 300C

Plasma HfO2

Hardware used: Beneq TFS-200
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Substrates

Notes

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