Wafer-level uniformity of atomic-layer-deposited niobium nitride thin films for quantum devices

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 39, 052401 (2021)
Date:
2021-06-24

Author Information

Name Institution
Emanuel KnehrKarlsruhe Institute of Technology (KIT)
Mario ZieglerLeibniz Institute of Photonic Technology
Sven LinzenLeibniz Institute of Photonic Technology
Konstantin IlinKarlsruhe Institute of Technology (KIT)
Patrick SchanzKarlsruhe Institute of Technology (KIT)
Jonathan PlentzLeibniz Institute of Photonic Technology
Marco DiegelLeibniz Institute of Photonic Technology
Heidemarie SchmidtLeibniz Institute of Photonic Technology
Evgeni Il'ichevLeibniz Institute of Photonic Technology
Michael SiegelKarlsruhe Institute of Technology (KIT)

Films


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: AFM, Atomic Force Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Critical Temperature
Analysis: Custom

Characteristic: Switching Current Density
Analysis: Custom

Substrates

SiO2
Al2O3

Keywords

Superconductor

Notes

1579