On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes

Type:
Journal
Info:
ACS Appl. Mater. Interfaces, just accepted
Date:
2015-11-30

Author Information

Name Institution
Daniel Kai SimonNaMLab gGmbH
Paul Matthias JordanNaMLab gGmbH
Thomas MikolajickNaMLab gGmbH
Ingo DirnstorferNaMLab gGmbH

Films

Thermal Al2O3



Plasma SiO2



CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Minority Carrier Lifetime
Analysis: MDP, Microwave Detected Photoconductivity

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(100)

Notes

433