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Publication Information

Title: On the Control of the Fixed Charge Densities in Al2O3 Based Silicon Surface Passivation Schemes

Type: Journal

Info: ACS Appl. Mater. Interfaces, just accepted

Date: 2015-11-30

DOI: http://dx.doi.org/10.1021/acsami.5b06606

Author Information

Name

Institution

NaMLab gGmbH

NaMLab gGmbH

NaMLab gGmbH

NaMLab gGmbH

Films

Deposition Temperature = 150C

75-24-1

7732-18-5

Deposition Temperature = 150C

352535-01-4

7732-18-5

Deposition Temperature = 150C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Minority Carrier Lifetime

MDP, Microwave Detected Photoconductivity

MDPmap, Freiberg Instruments GmbH

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Fixed Charge

C-V, Capacitance-Voltage Measurements

Keithley 4200-SCS

Images

TEM, Transmission Electron Microscope

Zeiss Libra 200 MC CsS

Substrates

Si(100)

Keywords

Notes

433


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