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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Encapsulation method for atom probe tomography analysis of nanoparticles
Type:
Journal
Info:
Ultramicroscopy, Available online 24 February 2015
Date:
2015-04-28
Author Information
| Name | Institution |
|---|---|
| D.J. Larson | CAMECA Instruments Inc. |
| A.D. Giddings | CAMECA Instruments Inc. |
| Y. Wu | Eindhoven University of Technology |
| Marcel A. Verheijen | Eindhoven University of Technology |
| T.J. Prosa | CAMECA Instruments Inc. |
| Fred Roozeboom | Eindhoven University of Technology |
| K.P. Rice | CAMECA Instruments Inc. |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
| B.P. Geiser | CAMECA Instruments Inc. |
| T.F. Kelly | CAMECA Instruments Inc. |
Films
Thermal Al:ZnO
Film/Plasma Properties
Characteristic: Images
Analysis: APT, Atom Probe Tomography
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Substrates
Keywords
Notes
| 329 |