Publication Information

Title: Atomic layer deposition of high-mobility hydrogen-doped zinc oxide

Type: Journal

Info: Solar Energy Materials and Solar Cells, Volume 173, 2017, Pages 111 - 119

Date: 2017-05-17

DOI: https://doi.org/10.1016/j.solmat.2017.05.040

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Forschungszentrum J├╝lich

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature = 200C

557-20-0

7732-18-5

Deposition Temperature = 200C

557-20-0

7732-18-5

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000D

Resistivity, Sheet Resistance

Hall Measurements

Ecopia HMS-5300

Carrier Concentration

Hall Measurements

Ecopia HMS-5300

Mobility

Hall Measurements

Ecopia HMS-5300

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

NT-MDT Solver P47SPM

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Images

TEM, Transmission Electron Microscope

JEOL JEM ARM 200

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

JEOL JEM ARM 200

Thermal Effusion

QMS, Quadrupole Mass Spectrometer

Custom

Substrates

ZnO

Keywords

Notes

Supplement contains ZnO etch data and nice table of experimental results https://ars.els-cdn.com/content/image/1-s2.0-S0927024817302593-mmc1.pdf

1047



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