Publication Information

Title: Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

Type: Journal

Info: J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012

Date: 2012-01-01

DOI: http://dx.doi.org/10.1116/1.3664756

Author Information

Name

Institution

MIT Lincoln Laboratory

MIT Lincoln Laboratory

Oxford Instruments

Films

Deposition Temperature Range = 150-350C

126970-21-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Rudolf AutoEL III

Refractive Index

Ellipsometry

Rudolf AutoEL III

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Physical Electronics PHI 5600 ESCA

Etch Rate

Plasma Etching

Trikon Pinnacle Plasma Etcher

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley Autometer Probe Station

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley Autometer Probe Station

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley Autometer Probe Station

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley Autometer Probe Station

Work Function

C-V, Capacitance-Voltage Measurements

Keithley Autometer Probe Station

Leakage Current

I-V, Current-Voltage Measurements

-

Interfacial Layer

Unknown

-

Fixed Charge

Unknown

-

Refractive Index

Ellipsometry

KLA UV1280

Substrates

Silicon

Keywords

Notes

Plasma generated by alumina tube wrapped by inductive coil.

Substrate Pirahna cleaned + HF dip.

Films annealed.

28



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