Publication Information

Title: Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

Type: Journal

Info: J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012

Date: 2012-01-01

DOI: http://dx.doi.org/10.1116/1.3664756

Author Information

Name

Institution

MIT Lincoln Laboratory

MIT Lincoln Laboratory

Oxford Instruments

Films

Deposition Temperature Range = 150-350C

126970-21-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Rudolf AutoEL III

Refractive Index

Ellipsometry

Rudolf AutoEL III

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Physical Electronics PHI 5600 ESCA

Etch Rate

Plasma Etching

Trikon Pinnacle Plasma Etcher

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley Autometer Probe Station

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley Autometer Probe Station

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley Autometer Probe Station

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley Autometer Probe Station

Work Function

C-V, Capacitance-Voltage Measurements

Keithley Autometer Probe Station

Leakage Current

I-V, Current-Voltage Measurements

Unknown

Interfacial Layer

Unknown

Unknown

Fixed Charge

Unknown

Unknown

Refractive Index

Ellipsometry

KLA UV1280

Substrates

Silicon

Keywords

Notes

Plasma generated by alumina tube wrapped by inductive coil.

Substrate Pirahna cleaned + HF dip.

Films annealed.

28



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