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Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2012-01-01
Author Information
| Name | Institution |
|---|---|
| Steven A. Vitale | MIT Lincoln Laboratory |
| Peter W. Wyatt | MIT Lincoln Laboratory |
| Chris Hodson | Oxford Instruments |
Films
Plasma Gd2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Etch Rate
Analysis: Plasma Etching
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Interfacial Layer
Analysis: -
Characteristic: Fixed Charge
Analysis: -
Characteristic: Refractive Index
Analysis: Ellipsometry
Substrates
| Silicon |
Notes
| Plasma generated by alumina tube wrapped by inductive coil. |
| Substrate Pirahna cleaned + HF dip. |
| Films annealed. |
| 28 |