Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2012-01-01
DOI:
http://dx.doi.org/10.1116/1.3664756

Author Information

Name Institution
Steven A. VitaleMIT Lincoln Laboratory
Peter W. WyattMIT Lincoln Laboratory
Chris HodsonOxford Instruments

Films

Plasma Gd2O3

Hardware used: Oxford Instruments OpAL
Gd(i-PrCp)3
CAS#: 126970-21-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 150-350C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL III

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: Rudolf AutoEL III

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Physical Electronics PHI 5600 ESCA

Characteristic: Etch Rate
Analysis: Plasma Etching
Diagnostic: Trikon Pinnacle Plasma Etcher

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley Autometer Probe Station

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley Autometer Probe Station

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley Autometer Probe Station

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley Autometer Probe Station

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley Autometer Probe Station

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: -
Diagnostic: -

Characteristic: Fixed Charge
Analysis: -
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: KLA UV1280

Substrates

Silicon

Notes

Plasma generated by alumina tube wrapped by inductive coil.
Substrate Pirahna cleaned + HF dip.
Films annealed.
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