Publication Information

Title:
Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide
Type:
Journal
Info:
J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012
Date:
2012-01-01

Author Information

Name Institution
Steven A. VitaleMIT Lincoln Laboratory
Peter W. WyattMIT Lincoln Laboratory
Chris HodsonOxford Instruments

Films

Plasma Gd2O3



CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Etch Rate
Analysis: Plasma Etching

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Work Function
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Interfacial Layer
Analysis: -

Characteristic: Fixed Charge
Analysis: -

Characteristic: Refractive Index
Analysis: Ellipsometry

Substrates

Silicon

Keywords

Notes

Plasma generated by alumina tube wrapped by inductive coil.
Substrate Pirahna cleaned + HF dip.
Films annealed.
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