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Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Applied Physics 119, 075702 (2016)
Date:
2016-01-17
DOI:
http://dx.doi.org/10.1063/1.4942160

Author Information

Name Institution
Zhongyuan MaNanjing University
Wen WangNanjing University
Huafeng YangNanjing University
Xiaofan JiangNanjing University
Jie YuNanjing University
Hua QinChinese Academy of Sciences
Ling XuNanjing University
Kunji ChenNanjing University
Xinfan HuangNanjing University
Wei LiNanjing University
Jun XuNanjing University
Duan FengNanjing University

Films

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 300C

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Substrates

Notes

769