Publication Information

Title:
Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Applied Physics 119, 075702 (2016)
Date:
2016-01-17

Author Information

Name Institution
Zhongyuan MaNanjing University
Wen WangNanjing University
Huafeng YangNanjing University
Xiaofan JiangNanjing University
Jie YuNanjing University
Hua QinChinese Academy of Sciences
Ling XuNanjing University
Kunji ChenNanjing University
Xinfan HuangNanjing University
Wei LiNanjing University
Jun XuNanjing University
Duan FengNanjing University

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Thickness
Analysis: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Keywords

Notes

769