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Publication Information

Title: Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition

Type: Journal

Info: Journal of Applied Physics 119, 075702 (2016)

Date: 2016-01-17

DOI: http://dx.doi.org/10.1063/1.4942160

Author Information

Name

Institution

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Chinese Academy of Sciences

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Nanjing University

Films

Deposition Temperature = 300C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Unknown

Substrates

Keywords

Notes

769



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