Performance and retention characteristics of nanocrystalline Si floating gate memory with an Al2O3 tunnel layer fabricated by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Applied Physics 119, 075702 (2016)
Date:
2016-01-17
Author Information
| Name | Institution |
|---|---|
| Zhongyuan Ma | Nanjing University |
| Wen Wang | Nanjing University |
| Huafeng Yang | Nanjing University |
| Xiaofan Jiang | Nanjing University |
| Jie Yu | Nanjing University |
| Hua Qin | Chinese Academy of Sciences |
| Ling Xu | Nanjing University |
| Kunji Chen | Nanjing University |
| Xinfan Huang | Nanjing University |
| Wei Li | Nanjing University |
| Jun Xu | Nanjing University |
| Duan Feng | Nanjing University |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
Notes
| 769 |