Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

Type:
Journal
Info:
Applied Surface Science 338 (2015) 35 - 41
Date:
2015-02-17
DOI:
http://dx.doi.org/10.1016/j.apsusc.2015.02.119

Author Information

Name Institution
Sebastian GoerkeLeibniz Institute of Photonic Technology
Mario ZieglerLeibniz Institute of Photonic Technology
Andreas IhringLeibniz Institute of Photonic Technology
Jan DellithLeibniz Institute of Photonic Technology
Andreas UndiszFriedrich-Schiller-Universität Jena
Marco DiegelLeibniz Institute of Photonic Technology
Solveig AndersLeibniz Institute of Photonic Technology
Uwe HübnerLeibniz Institute of Photonic Technology
Markus RettenmayrFriedrich-Schiller-Universität Jena
Hans-Georg MeyerLeibniz Institute of Photonic Technology

Films

Plasma AlN

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

422