Publication Information

Title: Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

Type: Journal

Info: Applied Surface Science 338 (2015) 35 - 41

Date: 2015-02-17

DOI: http://dx.doi.org/10.1016/j.apsusc.2015.02.119

Author Information

Name

Institution

Sebastian Goerke

Leibniz Institute of Photonic Technology

Mario Ziegler

Leibniz Institute of Photonic Technology

Andreas Ihring

Leibniz Institute of Photonic Technology

Jan Dellith

Leibniz Institute of Photonic Technology

Andreas Undisz

Friedrich-Schiller-Universität Jena

Marco Diegel

Leibniz Institute of Photonic Technology

Solveig Anders

Leibniz Institute of Photonic Technology

Uwe Hübner

Leibniz Institute of Photonic Technology

Markus Rettenmayr

Friedrich-Schiller-Universität Jena

Hans-Georg Meyer

Leibniz Institute of Photonic Technology

Films

Plasma AlN using Oxford Instruments OpAL

Deposition Temperature Range N/A

TMA, Trimethyl Aluminum, Trimethylalane, Trimethylaluminium, Aluminium Trimethyl, Aluminum Trimethanide, Al(CH3)3, AlMe3, Al2(CH3)6, Al2Me6

75-24-1

Where to buy precursor

Nitrogen, N2

7727-37-9

Hydrogen, H2

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

Keywords

Notes

422


Mark Sowa

Shortcuts

Films
Precursors
Deposition Hardware
Authors
Film and Plasma Characteristics
Multi-factor Search
ALD and PEALD Background
On-line PEALD Theses
About plasma-ald.com

Contact Us
ALD Links

© 2014-2018 plasma-ald.com