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Area-Selective Atomic Layer Deposition of Two-Dimensional WS2 Nanolayers
In Situ Activation of an Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition
Precursor-surface interactions revealed during plasma-enhanced atomic layer deposition of metal oxide thin films by in-situ spectroscopic ellipsometry
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Publication Information
Title:
Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma
Type:
Journal
Info:
Applied Surface Science 338 (2015) 35 - 41
Date:
2015-02-17
Author Information
| Name | Institution |
|---|---|
| Sebastian Goerke | Leibniz Institute of Photonic Technology |
| Mario Ziegler | Leibniz Institute of Photonic Technology |
| Andreas Ihring | Leibniz Institute of Photonic Technology |
| Jan Dellith | Leibniz Institute of Photonic Technology |
| Andreas Undisz | Friedrich-Schiller-Universität Jena |
| Marco Diegel | Leibniz Institute of Photonic Technology |
| Solveig Anders | Leibniz Institute of Photonic Technology |
| Uwe Hübner | Leibniz Institute of Photonic Technology |
| Markus Rettenmayr | Friedrich-Schiller-Universität Jena |
| Hans-Georg Meyer | Leibniz Institute of Photonic Technology |
Films
Plasma AlN
Film/Plasma Properties
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| 422 |
Popular Precursors
Top Authors
| Erwin (W.M.M.) Kessels |
| Hyeongtag Jeon |
| Hyungjun Kim |
| Mauritius C. M. (Richard) van de Sanden |
| Christophe Detavernier |