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An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Inhibition of Crystal Growth during Plasma Enhanced Atomic Layer Deposition by Applying BIAS

Type:
Journal
Info:
Materials 2015, 8, 5425
Date:
2015-11-12
DOI:
http://dx.doi.org/10.3390/ma8115425

Author Information

Name Institution
Stephan RatzschFriedrich-Schiller-Universität Jena
Ernst-Bernhard KleyFriedrich-Schiller-Universität Jena
Andreas TünnermannFriedrich-Schiller-Universität Jena
Adriana SzeghalmiFriedrich-Schiller-Universität Jena

Films

Plasma TiO2

Hardware used: Oxford Instruments OpAL
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Hitachi S-4800 Field Emission Scanning Electron Microscope

Substrates

Notes

413