Nanoporous SiO2 thin films made by atomic layer deposition and atomic etching

Type:
Journal
Info:
Nanotechnology 27 (2016) 255603
Date:
2016-04-26
DOI:
https://doi.org/10.1088/0957-4484/27/25/255603

Author Information

Name Institution
Lilit GhazaryanFriedrich-Schiller-Universität Jena
Ernst-Bernhard KleyFriedrich-Schiller-Universität Jena
Andreas TünnermannFriedrich-Schiller-Universität Jena
Adriana SzeghalmiFriedrich-Schiller-Universität Jena

Films

Plasma Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma SiO2

Hardware used: Oxford Instruments OpAL
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma AlSixOy

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
3DMASi, (Me2N)3SiH, [(CH3)2N]3SiH, Tris(DiMethylAmido) Silane
CAS#: 15112-89-7
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Film/Plasma Properties

Characteristic: Porosity
Analysis: -
Diagnostic: -

Characteristic: Refractive Index
Analysis: -
Diagnostic: -

Substrates

Notes

827