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Low-Temperature Plasma-Assisted Atomic-Layer-Deposited SnO2 as an Electron Transport Layer in Planar Perovskite Solar Cells
Type:
Journal
Info:
ACS Appl. Mater. Interfaces, 2018, 10 (36), pp 30367-30378
Date:
2018-08-16
Author Information
| Name | Institution |
|---|---|
| Yinghuan Kuang | Eindhoven University of Technology |
| Valerio Zardetto | TNO |
| Roderick van Gils | Eindhoven University of Technology |
| Saurabh Karwal | Eindhoven University of Technology |
| Dibyashree Koushik | Eindhoven University of Technology |
| Marcel A. Verheijen | Eindhoven University of Technology |
| Lachlan E. Black | Eindhoven University of Technology |
| Christ Weijtens | Eindhoven University of Technology |
| Sjoerd Veenstra | Solliance Solar Research |
| Ronn Andriessen | TNO |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
| Mariadriana Creatore | Eindhoven University of Technology |
Films
Plasma SnO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Refractive Index
Analysis: Ellipsometry
Characteristic: Extinction Coefficient
Analysis: Ellipsometry
Characteristic: Transmittance
Analysis: Ellipsometry
Characteristic: Reflectance Spectra
Analysis: Ellipsometry
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: UV-Vis Transmission
Analysis: UV-VIS Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: UPS, Ultraviolet Photoemission Spectroscopy
Characteristic: Band Gap
Analysis: FTPS, Fourier Transform Photocurrent Spectroscopy
Characteristic: Short Circuit Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Open Circuit Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: Fill Factor
Analysis: I-V, Current-Voltage Measurements
Characteristic: Power Conversion Efficiency
Analysis: I-V, Current-Voltage Measurements
Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Substrates
| Si(100) |
| ITO |
Notes
| 1296 |