Publication Information

Title:
Gadolinium nitride films deposited using a PEALD based process
Type:
Journal
Info:
Journal of Crystal Growth Volume 338, Issue 1, 1 January 2012, Pages 111-117
Date:
2011-10-28

Author Information

Name Institution
Ziwen FangUniversity of Liverpool
Paul A. WilliamsSAFC Hitech
Rajesh OdedraSAFC Hitech
Hyeongtag JeonHanyang University
Richard PotterUniversity of Liverpool

Films


Plasma GdN


Plasma GdN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: MEIS, Medium Energy Ion Scattering

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction

Substrates

Si with native oxide

Keywords

Notes

H2 plasma pump/purge cycle used to remove O2 from system prior to GdN deposition.
TaN capped GdN to prevent oxidation.
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