Title: Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
Type: Journal
Info: IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1106-1108, 2013
Date: 2013-07-10
DOI: http://dx.doi.org/10.1109/LED.2013.2271973
Name
Institution
Hong Kong University of Science and Technology
Hong Kong University of Science and Technology
Hong Kong University of Science and Technology
Hong Kong University of Science and Technology
Characteristic
Analysis
Diagnostic
Crystallinity, Crystal Structure, Grain Size, Atomic Structure
GIXRD, Grazing Incidence X-Ray Diffraction
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Crystallinity, Crystal Structure, Grain Size, Atomic Structure
TEM, Transmission Electron Microscope
-
Capacitance
C-V, Capacitance-Voltage Measurements
-
Carrier Concentration
C-V, Capacitance-Voltage Measurements
-
Transistor Characteristics
Transistor Characterization
-
GaN
588
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