Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1106-1108, 2013

Date: 2013-07-10

DOI: http://dx.doi.org/10.1109/LED.2013.2271973

Author Information

Name

Institution

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Films

Deposition Temperature = 300C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Capacitance

C-V, Capacitance-Voltage Measurements

Unknown

Carrier Concentration

C-V, Capacitance-Voltage Measurements

Unknown

Transistor Characteristics

Transistor Characterization

Unknown

Substrates

GaN

Keywords

Notes

588



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