Publication Information

Title:
Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1106-1108, 2013
Date:
2013-07-10

Author Information

Name Institution
Cheng LiuHong Kong University of Science and Technology
Shenghou LiuHong Kong University of Science and Technology
Sen HuangHong Kong University of Science and Technology
Kevin J. ChenHong Kong University of Science and Technology

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

GaN

Keywords

Notes

588