The publication database currently has 1655 entries.
Use Advanced Search for more complex searches
Recent Database Additions
Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs
Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1106-1108, 2013
Date:
2013-07-10
Author Information
| Name | Institution |
|---|---|
| Cheng Liu | Hong Kong University of Science and Technology |
| Shenghou Liu | Hong Kong University of Science and Technology |
| Sen Huang | Hong Kong University of Science and Technology |
| Kevin J. Chen | Hong Kong University of Science and Technology |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| GaN |
Keywords
Notes
| 588 |