Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of AlN Epitaxial Thin Film for AlN/GaN Heterostructure TFTs

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 9, PP. 1106-1108, 2013

Date: 2013-07-10

DOI: http://dx.doi.org/10.1109/LED.2013.2271973

Author Information

Name

Institution

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Hong Kong University of Science and Technology

Films

Deposition Temperature = 300C

75-24-1

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Capacitance

C-V, Capacitance-Voltage Measurements

-

Carrier Concentration

C-V, Capacitance-Voltage Measurements

-

Transistor Characteristics

Transistor Characterization

-

Substrates

GaN

Keywords

Notes

588



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