Publication Information

Title:
Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:64, Issue:3, 2017
Date:
2017-01-20

Author Information

Name Institution
Jidong JinUniversity of Liverpool
Jacqueline S. WrenchUniversity of Liverpool
James T. GibbonUniversity of Liverpool
David HespUniversity of Liverpool
Andrew ShawUniversity of Liverpool
Ivona Z. MitrovicUniversity of Liverpool
Naser SedghiUniversity of Liverpool
Laurie J. PhillipsUniversity of Liverpool
Jianli ZouUniversity of Liverpool
Vinod R. DhanakUniversity of Liverpool
Paul R. ChalkerUniversity of Liverpool
Steve HallUniversity of Liverpool

Films

Plasma ZnO


Film/Plasma Properties

Characteristic: Ideality Factor
Analysis: I-V, Current-Voltage Measurements

Characteristic: Barrier Height
Analysis: I-V, Current-Voltage Measurements

Characteristic: On/Off Current Ratio
Analysis: I-V, Current-Voltage Measurements

Characteristic: Doping Density
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Ti

Keywords

Notes

1135