Schottky Diodes on ZnO Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
IEEE Transactions on Electron Devices, Volume:64, Issue:3, 2017
Date:
2017-01-20
Author Information
| Name | Institution |
|---|---|
| Jidong Jin | University of Liverpool |
| Jacqueline S. Wrench | University of Liverpool |
| James T. Gibbon | University of Liverpool |
| David Hesp | University of Liverpool |
| Andrew Shaw | University of Liverpool |
| Ivona Z. Mitrovic | University of Liverpool |
| Naser Sedghi | University of Liverpool |
| Laurie J. Phillips | University of Liverpool |
| Jianli Zou | University of Liverpool |
| Vinod R. Dhanak | University of Liverpool |
| Paul R. Chalker | University of Liverpool |
| Steve Hall | University of Liverpool |
Films
Plasma ZnO
Film/Plasma Properties
Characteristic: Ideality Factor
Analysis: I-V, Current-Voltage Measurements
Characteristic: Barrier Height
Analysis: I-V, Current-Voltage Measurements
Characteristic: On/Off Current Ratio
Analysis: I-V, Current-Voltage Measurements
Characteristic: Doping Density
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Ti |
Notes
| 1135 |