Publication Information

Title: Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Type: Journal

Info: Journal of Applied Physics 118, 045307 (2015)

Date: 2015-07-16

DOI: http://dx.doi.org/10.1063/1.4927517

Author Information

Name

Institution

MIT Lincoln Laboratory

MIT Lincoln Laboratory

MIT Lincoln Laboratory

Films

Deposition Temperature Range = 200-300C

3275-24-9

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

KLA UV1280

Thickness

TEM, Transmission Electron Microscope

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

XRF, X-Ray Fluorescence

Oxford X-Strata 980

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

Unknown

Substrates

SiO2

Keywords

Notes

380



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