About Plasma ALD, LLC

The Plasma Enhanced Atomic Layer Deposition Publication Database is developed and maintained by Plasma ALD, LLC, a developer and supplier of inductively coupled plasma (ICP) sources for plasma-enhanced atomic layer deposition (PEALD), atomic layer etch (ALE), thin-film etching, surface cleaning, surface modification, and research plasma systems.

Our ICP sources are designed for integration with existing ALD and vacuum-processing equipment. Plasma ALD also provides plasma-source integration, process-development, and troubleshooting assistance based on decades of experience with low-pressure plasma processing and PEALD systems.

Researchers, universities, equipment manufacturers, and laboratories looking for an ICP plasma source or assistance adding plasma capability to a vacuum system can learn more on our Plasma Sources page.

Atomic layer deposition for perovskite solar cells: research status, opportunities and challenges

Type:
Journal
Info:
Sustainable Energy Fuels, 2017, 1, 30
Date:
2016-12-24
DOI:
http://dx.doi.org/10.1039/C6SE00076B

Author Information

Name Institution
Valerio ZardettoEindhoven University of Technology
B. L. WilliamsEindhoven University of Technology
Alberto PerrottaEindhoven University of Technology
Francesco Di GiacomoSolliance Solar Research
Marcel A. VerheijenEindhoven University of Technology
Ronn AndriessenSolliance Solar Research
Erwin (W.M.M.) KesselsEindhoven University of Technology
Mariadriana CreatoreEindhoven University of Technology

Films

Plasma Al2O3

Hardware used: Oxford Instruments FlexAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 30-80C

Thermal Al2O3

Hardware used: Oxford Instruments OpAL
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 80-120C

Thermal ZnO

Hardware used: Oxford Instruments OpAL
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
H2O, Water
CAS#: 7732-18-5
Deposition Temperature Range = 100-120C

Plasma TiO2

Hardware used: Oxford Instruments FlexAL
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-80C

Plasma MoOx

Hardware used: Oxford Instruments OpAL
Bis(t-butylimido)bis(dimethylamino)molybdenum
CAS#: 923956-62-1
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 50-80C

Plasma NiOx

Hardware used: Custom
(MeCp)2Ni, Ni(C5H4CH3)2, Bis(methylcyclopentadienyl)nickel(II), 1,1'-Dimethylnickelocene
CAS#: 1293-95-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 50C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific KA1066 spectrometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Xpert PRO MRD X-ray Diffractometer

Substrates

MAPbI3, methylammonium lead iodide

Notes

982