A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density

Type:
Journal
Info:
J. Phys. D: Appl. Phys. 51 065102
Date:
2018-01-02

Author Information

Name Institution
Jidong JinUniversity of Liverpool
Jiawei ZhangUniversity of Manchester
Andrew ShawUniversity of Liverpool
Valeriya N KudinaNational Academy of Science of Ukraine
Ivona Z. MitrovicUniversity of Liverpool
Jacqueline S. WrenchUniversity of Liverpool
Paul R. ChalkerUniversity of Liverpool
Claudio BaloccoDurham University
Aimin SongUniversity of Manchester
Steve HallUniversity of Liverpool

Films

Plasma ZnO


Film/Plasma Properties

Characteristic: Etch Rate
Analysis: -

Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements

Characteristic: Unknown
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Ti

Keywords

Notes

ZnO etch rate in acetic acid discussed.
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