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A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
Type:
Journal
Info:
J. Phys. D: Appl. Phys. 51 065102
Date:
2018-01-02
Author Information
| Name | Institution |
|---|---|
| Jidong Jin | University of Liverpool |
| Jiawei Zhang | University of Manchester |
| Andrew Shaw | University of Liverpool |
| Valeriya N Kudina | National Academy of Science of Ukraine |
| Ivona Z. Mitrovic | University of Liverpool |
| Jacqueline S. Wrench | University of Liverpool |
| Paul R. Chalker | University of Liverpool |
| Claudio Balocco | Durham University |
| Aimin Song | University of Manchester |
| Steve Hall | University of Liverpool |
Films
Plasma ZnO
Film/Plasma Properties
Characteristic: Etch Rate
Analysis: -
Characteristic: Unknown
Analysis: I-V, Current-Voltage Measurements
Characteristic: Unknown
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Ti |
Notes
| ZnO etch rate in acetic acid discussed. |
| 1525 |