Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 44, No. 1, pp. 35-38
Date:
2003-12-03
Author Information
| Name | Institution |
|---|---|
| Sungwoo Choi | Hanyang University |
| Jaehyoung Koo | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
| Yangdo Kim | Pusan National University |
Films
Plasma HfO2
Thermal HfO2
Film/Plasma Properties
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Interfacial Layer
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1239 |