Publication Information

Title: Plasma-Enhanced Atomic-Layer Deposition of a HfO2 Gate Dielectric

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 44, No. 1, pp. 35-38

Date: 2003-12-03

DOI: http://www.jkps.or.kr/journal/download_pdf.php?spage=35&volume=44&number=1

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Pusan National University

Films

Deposition Temperature = 250C

19824-55-6

7782-44-7

Deposition Temperature = 250C

19824-55-6

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

Unknown

Interfacial Layer

XPS, X-ray Photoelectron Spectroscopy

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Leakage Current

I-V, Current-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Breakdown Voltage

I-V, Current-Voltage Measurements

HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)

Keywords

Plasma vs Thermal Comparison

Notes

1239



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