A study on film thickness control of vertical flow showerhead reactor for RF plasma deposition

Type:
Conference Proceedings
Info:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
Date:
2017-05-15
DOI:
http://dx.doi.org/10.1109/ASMC.2017.7969233

Author Information

Name Institution
Guensuk LeeSungkyunkwan University
Suhong KimSamsung Electronics Co.
Seunghyun SeokSamsung Electronics Co.
Junsung LeeSamsung Electronics Co.
Jinseok LeeSamsung Electronics Co.
Sangjin ChoiSamsung Electronics Co.
Taeyang YoonSamsung Electronics Co.
Juhwan ParkSamsung Electronics Co.
Han Seo KoSungkyunkwan University

Films

Plasma SiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
Deposition Temperature Range N/A

Film/Plasma Properties

Substrates

Notes

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