Publication Information

Title:
Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
Type:
Journal
Info:
RSC Adv., 2015, 5, 37881-37886
Date:
2015-04-21

Author Information

Name Institution
Duo CaoChinese Academy of Sciences
Xinhong ChengChinese Academy of Sciences
Ya-Hong XieUniversity of California - Los Angeles (UCLA)
Li ZhengUniversity of California - Los Angeles (UCLA)
Zhongjian WangChinese Academy of Sciences
Xinke YuUniversity of California - Los Angeles (UCLA)
Jia WangUniversity of California - Los Angeles (UCLA)
DaShen ShenUniversity of Alabama in Huntsville
Yuehui YuChinese Academy of Sciences

Films

Plasma AlN


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

AlGaN
GaN

Keywords

Notes

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