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Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures
Type:
Journal
Info:
RSC Adv., 2015, 5, 37881-37886
Date:
2015-04-21
Author Information
| Name | Institution |
|---|---|
| Duo Cao | Chinese Academy of Sciences |
| Xinhong Cheng | Chinese Academy of Sciences |
| Ya-Hong Xie | University of California - Los Angeles (UCLA) |
| Li Zheng | University of California - Los Angeles (UCLA) |
| Zhongjian Wang | Chinese Academy of Sciences |
| Xinke Yu | University of California - Los Angeles (UCLA) |
| Jia Wang | University of California - Los Angeles (UCLA) |
| DaShen Shen | University of Alabama in Huntsville |
| Yuehui Yu | Chinese Academy of Sciences |
Films
Plasma AlN
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Valence Band
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| AlGaN |
| GaN |
Notes
| 462 |