Publication Information

Title: Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

Type: Journal

Info: RSC Adv., 2015, 5, 37881-37886

Date: 2015-04-21

DOI: http://dx.doi.org/10.1039/C5RA04728E

Author Information

Name

Institution

Chinese Academy of Sciences

Chinese Academy of Sciences

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

Chinese Academy of Sciences

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

University of Alabama in Huntsville

Chinese Academy of Sciences

Films

Plasma AlN using Unknown

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

Unknown

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Unknown

Unknown

Electrical Properties

Unknown

Unknown

Substrates

AlGaN

GaN

Keywords

Notes

462



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