Publication Information

Title: Effects of rapid thermal annealing on the properties of AlN films deposited by PEALD on AlGaN/GaN heterostructures

Type: Journal

Info: RSC Adv., 2015, 5, 37881-37886

Date: 2015-04-21

DOI: http://dx.doi.org/10.1039/C5RA04728E

Author Information

Name

Institution

Chinese Academy of Sciences

Chinese Academy of Sciences

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

Chinese Academy of Sciences

University of California - Los Angeles (UCLA)

University of California - Los Angeles (UCLA)

University of Alabama in Huntsville

Chinese Academy of Sciences

Films

Deposition Temperature = 300C

75-24-1

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Philips CM200-FEG

Capacitance

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Thickness

Ellipsometry

-

Thickness

TEM, Transmission Electron Microscope

Philips CM200-FEG

Images

TEM, Transmission Electron Microscope

Philips CM200-FEG

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

-

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Valence Band

XPS, X-ray Photoelectron Spectroscopy

Kratos Analytical Axis Ultra DLD

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1505A Semiconductor Device Analyzer

Substrates

AlGaN

GaN

Keywords

Notes

462



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