Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
physica status solidi (a) Volume 211, Issue 2, pages 416-424, 2014
Date:
2013-09-19
DOI:
http://dx.doi.org/10.1002/pssa.201330115

Author Information

Name Institution
Van-Son DangRuhr-University Bochum
Harish ParalaRuhr-University Bochum
Jin Hyun KimRuhr-University Bochum
Ke XuRuhr-University Bochum
Nagendra B. SrinivasanRuhr-University Bochum
Eugen EdengeiserRuhr-University Bochum
Martina HavenithRuhr-University Bochum
Andreas D. WieckRuhr-University Bochum
Teresa de los ArcosRuhr-University Bochum
Roland A. FischerRuhr-University Bochum
Anjana DeviRuhr-University Bochum

Films

Plasma TiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
Ti(NMe2)3(guan), tris(dimethylamido) (N,N' diisopropyl-2-dimethylamidoguanidinato) titanium
CAS#: 0-0-0
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 100-225C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Diagnostic: PerkinElmer UV-Vis spectrometer

Characteristic: Optical Absorption
Analysis: UV-VIS Spectroscopy
Diagnostic: PerkinElmer UV-Vis spectrometer

Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy
Diagnostic: PerkinElmer UV-Vis spectrometer

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Bruker D8 Advance

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Diagnostic: Alpha 300R Confocal Raman Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Veeco AFM

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: PHI VersaProbe 5000

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4294A

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4155A Semiconductor Parameter Analyzer

Substrates

Si(100)
Glass

Notes

1379