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Electrical and optical properties of TiO2 thin films prepared by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
physica status solidi (a) Volume 211, Issue 2, pages 416-424, 2014
Date:
2013-09-19
Author Information
| Name | Institution |
|---|---|
| Van-Son Dang | Ruhr-University Bochum |
| Harish Parala | Ruhr-University Bochum |
| Jin Hyun Kim | Ruhr-University Bochum |
| Ke Xu | Ruhr-University Bochum |
| Nagendra B. Srinivasan | Ruhr-University Bochum |
| Eugen Edengeiser | Ruhr-University Bochum |
| Martina Havenith | Ruhr-University Bochum |
| Andreas D. Wieck | Ruhr-University Bochum |
| Teresa de los Arcos | Ruhr-University Bochum |
| Roland A. Fischer | Ruhr-University Bochum |
| Anjana Devi | Ruhr-University Bochum |
Films
Plasma TiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy
Characteristic: Optical Absorption
Analysis: UV-VIS Spectroscopy
Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: NRA, Nuclear Reaction Analysis
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
| Glass |
Notes
| 1379 |