Publication Information

Title:
Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application
Type:
Journal
Info:
Thin Solid Films 500 (2006) 231 - 236
Date:
2005-11-08

Author Information

Name Institution
Woo Seok YangElectronics and Telecommunication Research Institute, (ETRI)
Sung Weon KangElectronics and Telecommunication Research Institute, (ETRI)

Films

Thermal Al2O3


Thermal Ta2O5



Plasma TiO2


Film/Plasma Properties

Characteristic: Thickness
Analysis: Reflectometry

Characteristic: Wet Etch Resistance
Analysis: Custom

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Substrates

Silicon
Au

Keywords

Notes

1294