Publication Information

Title: Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application

Type: Journal

Info: Thin Solid Films 500 (2006) 231 - 236

Date: 2005-11-08

DOI: https://doi.org/10.1016/j.tsf.2005.11.014

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Films

Thermal Al2O3 using Custom

Deposition Temperature = 250C

75-24-1

7732-18-5

Thermal Ta2O5 using Custom

Deposition Temperature = 250C

6074-84-6

7732-18-5

Deposition Temperature = 150C

175923-04-3

7782-44-7

Deposition Temperature = 250C

546-68-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Reflectometry

-

Wet Etch Resistance

Custom

Custom

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Substrates

Silicon

Au

Keywords

Notes

1294



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