Comparative study on chemical stability of dielectric oxide films under HF wet and vapor etching for radiofrequency microelectromechanical system application

Type:
Journal
Info:
Thin Solid Films 500 (2006) 231 - 236
Date:
2005-11-08
DOI:
https://doi.org/10.1016/j.tsf.2005.11.014

Author Information

Name Institution
Woo Seok YangElectronics and Telecommunication Research Institute, (ETRI)
Sung Weon KangElectronics and Telecommunication Research Institute, (ETRI)

Films

Thermal Al2O3

Hardware used: Custom
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Thermal Ta2O5

Hardware used: Custom
Ta(OC2H5)5, Ta(OEt)5, Tantalum(V) ethoxide
CAS#: 6074-84-6
Where to buy precursor
H2O, Water
CAS#: 7732-18-5
Where to buy precursor
Deposition Temperature = 250C

Plasma ZrO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TEMAZr, (EtMeN)4Zr, [(C2H5)(CH3)N]4Zr, Tetrakis(EthylMethylAmido) Zirconium, Zirconium Ethylmethylamide
CAS#: 175923-04-3
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 150C

Plasma TiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TTIP, titanium(IV) isopropoxide, Ti(O-i-Pr)4
CAS#: 546-68-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Reflectometry
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

Silicon
Au

Notes

1294