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Infrared single-photon sensitivity in atomic layer deposited superconducting nanowires
Effects of deposition temperature on the wear behavior and material properties of plasma enhanced atomic layer deposition (PEALD) titanium vanadium nitride thin films
Gallium nitride thin films by microwave plasma-assisted ALD
Ferroelectricity of HfxZr1-xO2 thin films fabricated by 300°C low temperature process with plasma-enhanced atomic layer deposition
Hydrogen-induced abstraction mechanism of surface methyl groups in atomic-layer-epitaxy of germanium
Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment
Type:
Journal
Info:
Solid-State Electronics 54 (2010) 323 - 326
Date:
2009-10-25
Author Information
| Name | Institution |
|---|---|
| Dong-Jin Park | Kyungpook National University |
| Jung Wook Lim | Electronics and Telecommunication Research Institute, (ETRI) |
| Byung Ok Park | Kyungpook National University |
Films
Plasma AlON
Film/Plasma Properties
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Transistor Characteristics
Analysis: Transistor Characterization
Substrates
| Silicon |
Notes
| 716 |