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Publication Information

Title: Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment

Type: Journal

Info: Solid-State Electronics 54 (2010) 323 - 326

Date: 2009-10-25

DOI: http://dx.doi.org/10.1016/j.sse.2009.10.017

Author Information

Name

Institution

Kyungpook National University

Electronics and Telecommunication Research Institute, (ETRI)

Kyungpook National University

Films

Deposition Temperature = 200C

75-24-1

7782-44-7

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Unknown

Hysteresis

C-V, Capacitance-Voltage Measurements

Unknown

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

Transistor Characteristics

Transistor Characterization

Unknown

Substrates

Silicon

Keywords

Notes

716


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