Stabilization of Al2O3 gate oxide on plastic substrate for low temperature poly-silicon by in situ plasma treatment

Type:
Journal
Info:
Solid-State Electronics 54 (2010) 323 - 326
Date:
2009-10-25

Author Information

Name Institution
Dong-Jin ParkKyungpook National University
Jung Wook LimElectronics and Telecommunication Research Institute, (ETRI)
Byung Ok ParkKyungpook National University

Films

Plasma AlON


Film/Plasma Properties

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Transistor Characteristics
Analysis: Transistor Characterization

Substrates

Silicon

Keywords

Notes

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