Publication Information

Title:
An Analysis of the Deposition Mechanisms involved during Self-Limiting Growth of Aluminum Oxide by Pulsed PECVD
Type:
Journal
Info:
Chem. Vap. Deposition 2008, 14, 296–302
Date:
2008-10-06

Author Information

Name Institution
Michael T. SemanCMD Research LLC
David N. RichardsColorado School of Mines
Pieter RowletteColorado School of Mines
Colin A. WoldenColorado School of Mines

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Silicon
ITO

Keywords

Al2O3
Atomic Layer Deposition
Plasma
Pulsed PECVD

Notes

Si wafers had HF-dip.
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