Publication Information

Title: Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD

Type: Journal

Info: Electrochemical and Solid-State Letters, 7 (5) F31-F34 (2004)

Date: 2003-10-14

DOI: http://dx.doi.org/10.1149/1.1667017

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Dong-Eui University

Chungnam National University

Chungnam National University

Films

Deposition Temperature = 250C

0-0-0

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Rigaku D/Max-RC

Thickness

TEM, Transmission Electron Microscope

Philips CM20

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco Autoprobe CP

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

VG Scientific Microlab 310-D

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Cameca SX-51

Ferroelectricity

Ferroelectrical Testing

Radient Technology RT66A

Leakage Current

I-V, Current-Voltage Measurements

HP 4145B Semiconductor Parameter Analyzer

Substrates

Pt

Keywords

Notes

1168



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