Publication Information

Title:
Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (5) F31-F34 (2004)
Date:
2003-10-14

Author Information

Name Institution
Woong-Chul ShinElectronics and Telecommunication Research Institute, (ETRI)
Sang-Ouk RyuElectronics and Telecommunication Research Institute, (ETRI)
In-Kyu YouElectronics and Telecommunication Research Institute, (ETRI)
Sung-Min YoonElectronics and Telecommunication Research Institute, (ETRI)
S. M. ChoElectronics and Telecommunication Research Institute, (ETRI)
N. Y. LeeElectronics and Telecommunication Research Institute, (ETRI)
K. D. KimElectronics and Telecommunication Research Institute, (ETRI)
Byoung-Gon YuElectronics and Telecommunication Research Institute, (ETRI)
Won-Jae LeeDong-Eui University
Kyu-Jeong ChoiChungnam National University
Soon-Gil YoonChungnam National University

Films

Plasma SrBi2Ta2O9


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Ferroelectricity
Analysis: Ferroelectrical Testing

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Pt

Keywords

Notes

1168