Low Voltage Switching Characteristics of 60 nm Thick SrBi2Ta2O9 Thin Films Deposited by Plasma-Enhanced ALD
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (5) F31-F34 (2004)
Date:
2003-10-14
Author Information
Name | Institution |
---|---|
Woong-Chul Shin | Electronics and Telecommunication Research Institute, (ETRI) |
Sang-Ouk Ryu | Electronics and Telecommunication Research Institute, (ETRI) |
In-Kyu You | Electronics and Telecommunication Research Institute, (ETRI) |
Sung-Min Yoon | Electronics and Telecommunication Research Institute, (ETRI) |
S. M. Cho | Electronics and Telecommunication Research Institute, (ETRI) |
N. Y. Lee | Electronics and Telecommunication Research Institute, (ETRI) |
K. D. Kim | Electronics and Telecommunication Research Institute, (ETRI) |
Byoung-Gon Yu | Electronics and Telecommunication Research Institute, (ETRI) |
Won-Jae Lee | Dong-Eui University |
Kyu-Jeong Choi | Chungnam National University |
Soon-Gil Yoon | Chungnam National University |
Films
Plasma SrBi2Ta2O9
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Ferroelectricity
Analysis: Ferroelectrical Testing
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
Pt |
Notes
1168 |