SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 116, 213502 (2020)
Date:
2020-05-20

Author Information

Name Institution
Yu-Lin HsuNational Chiao Tung University
Yao-Feng ChangUniversity of Texas at Austin
Wei-Min ChungNational Chiao Tung University
Ying-Chen ChenNorthern Arizona University
Chao-Cheng LinNational Applied Research Laboratories
Jihperng LeuNational Chiao Tung University

Films

Plasma SiCxNy


Film/Plasma Properties

Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements

Characteristic: Thickness
Analysis: Reflectometry

Characteristic: Refractive Index
Analysis: Reflectometry

Characteristic: Chemical Binding
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Al

Keywords

Notes

1548