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SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Applied Physics Letters 116, 213502 (2020)
Date:
2020-05-20
Author Information
| Name | Institution |
|---|---|
| Yu-Lin Hsu | National Chiao Tung University |
| Yao-Feng Chang | University of Texas at Austin |
| Wei-Min Chung | National Chiao Tung University |
| Ying-Chen Chen | Northern Arizona University |
| Chao-Cheng Lin | National Applied Research Laboratories |
| Jihperng Leu | National Chiao Tung University |
Films
Plasma SiCxNy
Film/Plasma Properties
Characteristic: Resistive Switching
Analysis: I-V, Current-Voltage Measurements
Characteristic: Thickness
Analysis: Reflectometry
Characteristic: Refractive Index
Analysis: Reflectometry
Characteristic: Chemical Binding
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Al |
Notes
| 1548 |