Publication Information

Title: Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures

Type: Journal

Info: J. Vac. Sci. Technol. B 25(6) Nov/Dec 2007

Date: 2007-10-22

DOI: http://dx.doi.org/10.1116/1.2811707

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Deposition Temperature = 250C

19824-55-6

7782-44-7

Deposition Temperature = 250C

19824-55-6

7727-37-9

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Interfacial Layer

TEM, Transmission Electron Microscope

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

Keithley 590 CV Analyzer

Substrates

Si(100)

HfSiON

Keywords

Notes

1184



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