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Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures
Type:
Journal
Info:
J. Vac. Sci. Technol. B 25(6) Nov/Dec 2007
Date:
2007-10-22
Author Information
| Name | Institution |
|---|---|
| Seokhoon Kim | Hanyang University |
| Sanghyun Woo | Hanyang University |
| Hyungchul Kim | Hanyang University |
| Wooho Jeong | Hanyang University |
| Taeyong Park | Hanyang University |
| Honggyu Kim | Hanyang University |
| Sung Bae Kim | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma HfO2
Plasma HfSiON
Hardware used: Custom Direct Capacitively Coupled Plasma
CAS#: 19824-55-6
CAS#: 7727-37-9
CAS#: 7782-44-7
Film/Plasma Properties
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
| HfSiON |
Notes
| 1184 |