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Atomic layer deposited HfO2/HfSixOyNz stacked gate dielectrics for metal-oxide-semiconductor structures

Type:
Journal
Info:
J. Vac. Sci. Technol. B 25(6) Nov/Dec 2007
Date:
2007-10-22
DOI:
http://dx.doi.org/10.1116/1.2811707

Author Information

Name Institution
Seokhoon KimHanyang University
Sanghyun WooHanyang University
Hyungchul KimHanyang University
Wooho JeongHanyang University
Taeyong ParkHanyang University
Honggyu KimHanyang University
Sung Bae KimHanyang University
Hyeongtag JeonHanyang University

Films

Plasma HfO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Plasma HfSiON

Hardware used: Custom Direct Capacitively Coupled Plasma
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
N2, Nitrogen
CAS#: 7727-37-9
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Effective Oxide Charge, Qeff
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Substrates

Si(100)
HfSiON

Notes

1184