Publication Information

Title: Self-limiting deposition of semiconducting ZnO by pulsed plasma-enhanced chemical vapor deposition

Type: Journal

Info: Journal of Vacuum Science & Technology A 27, 761-766 (2009)

Date: 2009-03-23

DOI: http://dx.doi.org/10.1116/1.3119673

Author Information

Name

Institution

Colorado School of Mines

Colorado School of Mines

Colorado School of Mines

Colorado School of Mines

Films

Deposition Temperature Range = 25-155C

544-97-8

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Siemens Kristalloflex 810

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Nicolet Nexus 870

Photoluminescence

PL, PhotoLuminescence

SPEX 1691 Fluorolog

Thickness

Ellipsometry

J.A. Woollam

Refractive Index

Ellipsometry

J.A. Woollam

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Kratos Axis

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

JEOL JSM-7000F

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Digital Instruments Nanoscope III

Resistivity, Sheet Resistance

Hall Measurements

Accent HL5500

Substrates

Silicon

Keywords

Notes

757



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