Publication Information

Title: Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant

Type: Journal

Info: Journal of Vacuum Science & Technology A 31, 01A142 (2013)

Date: 2012-11-28

DOI: http://dx.doi.org/10.1116/1.4771666

Author Information

Name

Institution

Nara Institute of Science and Technology

Mitsui Engineering & Shipbuilding Co., Ltd.

Mitsui Engineering & Shipbuilding Co., Ltd.

Nara Institute of Science and Technology

Films

Deposition Temperature = 100C

557-20-0

7782-44-7

Deposition Temperature = 100C

557-20-0

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Compositional Depth Profiling

SIMS, Secondary Ion Mass Spectrometry

-

Transistor Characteristics

Transistor Characterization

-

Substrates

SiO2

Keywords

Notes

635



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