Publication Information

Title: Comparison between ZnO films grown by plasma-assisted atomic layer deposition using H2O plasma and O2 plasma as oxidant

Type: Journal

Info: Journal of Vacuum Science & Technology A 31, 01A142 (2013)

Date: 2012-11-28

DOI: http://dx.doi.org/10.1116/1.4771666

Author Information

Name

Institution

Nara Institute of Science and Technology

Mitsui Engineering & Shipbuilding Co., Ltd.

Mitsui Engineering & Shipbuilding Co., Ltd.

Nara Institute of Science and Technology

Films

Deposition Temperature = 100C

557-20-0

7782-44-7

Deposition Temperature = 100C

557-20-0

7732-18-5

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Compositional Depth Profiling

SIMS, Secondary Ion Mass Spectrometry

Unknown

Transistor Characteristics

Transistor Characterization

Unknown

Substrates

SiO2

Keywords

Notes

635



Shortcuts



© 2014-2019 plasma-ald.com