Publication Information

Title:
Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 4 (7) F13-F14 (2001)
Date:
2001-02-24

Author Information

Name Institution
Hyun-Jung SongKorea Advanced Institute of Science and Technology
Choon-Soo LeeGenitech Co., Ltd.
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Ta2O5


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

1165