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Increment of the Dielectric Constant of Ta2O5 Thin Films by Retarding Interface Oxide Growth on Si Substrates
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 4 (7) F13-F14 (2001)
Date:
2001-02-24
Author Information
| Name | Institution |
|---|---|
| Hyun-Jung Song | Korea Advanced Institute of Science and Technology |
| Choon-Soo Lee | Genitech Co., Ltd. |
| Sang-Won Kang | Korea Advanced Institute of Science and Technology |
Films
Plasma Ta2O5
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| 1165 |