Publication Information

Title: Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma

Type: Journal

Info: Electrochemical and Solid-State Letters, 5(10) C91-C93 (2002)

Date: 2002-08-06

DOI: http://dx.doi.org/10.1149/1.1503204

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Films

Deposition Temperature = 250C

75-24-1

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

-

Thickness

Profilometry

Tencor Alpha-Step Profilometer

Thickness

TEM, Transmission Electron Microscope

-

Substrates

TiN

Keywords

PEALD Film Development

Notes

Thermal decomposition of TMA data

5



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