Publication Information

Title: Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma

Type: Journal

Info: Electrochemical and Solid-State Letters, 5(10) C91-C93 (2002)

Date: 2002-08-06

DOI: http://dx.doi.org/10.1149/1.1503204

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Films

Deposition Temperature = 250C

75-24-1

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Thickness

Profilometry

Tencor Alpha-Step Profilometer

Thickness

TEM, Transmission Electron Microscope

Unknown

Substrates

TiN

Keywords

PEALD Film Development

Notes

Thermal decomposition of TMA data

5



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