Atomic layer deposition of aluminum thin films using an alternating supply of trimethylaluminum and a hydrogen plasma

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 5(10) C91-C93 (2002)
Date:
2002-08-06
DOI:
http://dx.doi.org/10.1149/1.1503204

Author Information

Name Institution
Yong Ju LeeKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Al

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
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H2, Hydrogen
CAS#: 1333-74-0

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Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Diagnostic: -

Characteristic: Thickness
Analysis: Profilometry
Diagnostic: Tencor Alpha-Step Profilometer

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

TiN

Notes

Thermal decomposition of TMA data
5