Publication Information

Title:
Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement
Type:
Journal
Info:
Energies 2020, 13, 1803
Date:
2020-04-07

Author Information

Name Institution
Kwan Hong MinKorea Institute of Energy Research
Sungjin ChoiKorea Institute of Energy Research
Myeong Sang JeongKorea Institute of Energy Research
Sungeun ParkKorea Institute of Energy Research
Min Gu KangKorea Institute of Energy Research
Jeong In LeeKorea Institute of Energy Research
Yoonmook KangKorea University
Dong-Hwan KimKorea University
Hae-Seok LeeKorea University
Hee-eun SongKorea Institute of Energy Research

Films

Plasma Al2O3


Film/Plasma Properties

Characteristic: Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay

Characteristic: Lifetime
Analysis: Custom

Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

SiO2

Keywords

Solar
Passivation

Notes

1488