Wet Chemical Oxidation to Improve Interfacial Properties of Al2O3/Si and Interface Analysis of Al2O3/SiOx/Si Structure Using Surface Carrier Lifetime Simulation and Capacitance-Voltage Measurement

Type:
Journal
Info:
Energies 2020, 13, 1803
Date:
2020-04-07
DOI:
http://dx.doi.org/10.3390/en13071803

Author Information

Name Institution
Kwan Hong MinKorea Institute of Energy Research
Sungjin ChoiKorea Institute of Energy Research
Myeong Sang JeongKorea Institute of Energy Research
Sungeun ParkKorea Institute of Energy Research
Min Gu KangKorea Institute of Energy Research
Jeong In LeeKorea Institute of Energy Research
Yoonmook KangKorea University
Dong-Hwan KimKorea University
Hae-Seok LeeKorea University
Hee-eun SongKorea Institute of Energy Research

Films

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Lifetime
Analysis: QSSPC, Quasi-Steady-State PhotoConductance Decay
Diagnostic: -

Characteristic: Lifetime
Analysis: Custom
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Effective Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Substrates

SiO2

Notes

1488