High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical

Type:
Journal
Info:
IEEE ELECTRON DEVICE LETTERS, VOL. 31, NO. 8, PP. 857-859, 2010
Date:
2010-05-02

Author Information

Name Institution
Seok-Jun WonSeoul National University
Sungin SuhSeoul National University
Myung Soo HuhSeoul National University
Hyeong Joon KimSeoul National University

Films


Film/Plasma Properties

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Etch Rate
Analysis: Custom

Characteristic: Density
Analysis: GIXRR, Grazing Incidence X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

Silicon

Keywords

Etch Resistance

Notes

Claims BDEAS has no reaction with O2 gas but I doubt this.
706