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Publication Information

Title: High-Quality Low-Temperature Silicon Oxide by Plasma-Enhanced Atomic Layer Deposition Using a Metal-Organic Silicon Precursor and Oxygen Radical

Type: Journal

Info: IEEE ELECTRON DEVICE LETTERS, VOL. 31, NO. 8, PP. 857-859, 2010

Date: 2010-05-02

DOI: http://dx.doi.org/10.1109/LED.2010.2049978

Author Information

Name

Institution

Seoul National University

Seoul National University

Seoul National University

Seoul National University

Films

Deposition Temperature = 280C

27804-64-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Breakdown Voltage

I-V, Current-Voltage Measurements

HP 4145B Semiconductor Parameter Analyzer

Leakage Current

I-V, Current-Voltage Measurements

HP 4145B Semiconductor Parameter Analyzer

Etch Rate

Custom

Custom

Density

GIXRR, Grazing Incidence X-Ray Reflectivity

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

Silicon

Keywords

Etch Resistance

Notes

Claims BDEAS has no reaction with O2 gas but I doubt this.

706


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