Optical in situ monitoring of plasma-enhanced atomic layer deposition process

Type:
Journal
Info:
Japanese Journal of Applied Physics 57, 06JF05 (2018)
Date:
2018-02-13
DOI:
http://dx.doi.org/10.7567/jjap.57.06jf05

Author Information

Name Institution
Muhammad Zeeshan ArshadMyongji University
Kyung Jae JoMyongji University
Hyun Gi KimMyongji University
Sang Jeen HongMyongji University

Films

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 120C

Film/Plasma Properties

Characteristic: Plasma Species
Analysis: OPMS, Optical Plasma Monitoring System
Diagnostic: -

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Thermo Scientific K-Alpha

Characteristic: Water Vapor Transmission Rate (WVTR)
Analysis: Water Vapor Transmission Rate (WVTR)
Diagnostic: Mocon PERMATRAN-W Model 3/33

Substrates

PEN, Polyethylene Napthalate

Notes

1652