
Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
Type:
Journal
Info:
Journal of The Electrochemical Society, 151 (5) C292-C296 (2004)
Date:
2003-11-03
Author Information
Name | Institution |
---|---|
Woong-Chul Shin | Electronics and Telecommunication Research Institute, (ETRI) |
Sang-Ouk Ryu | Electronics and Telecommunication Research Institute, (ETRI) |
In-Kyu You | Electronics and Telecommunication Research Institute, (ETRI) |
Byoung-Gon Yu | Electronics and Telecommunication Research Institute, (ETRI) |
Won-Jae Lee | Dong-Eui University |
Kyu-Jeong Choi | Chungnam National University |
Soon-Gil Yoon | Chungnam National University |
Films
Plasma SrTa2O6
Film/Plasma Properties
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Substrates
Si(100) |
Notes
1169 |