Publication Information

Title:
Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor
Type:
Journal
Info:
Journal of The Electrochemical Society, 151 (5) C292-C296 (2004)
Date:
2003-11-03

Author Information

Name Institution
Woong-Chul ShinElectronics and Telecommunication Research Institute, (ETRI)
Sang-Ouk RyuElectronics and Telecommunication Research Institute, (ETRI)
In-Kyu YouElectronics and Telecommunication Research Institute, (ETRI)
Byoung-Gon YuElectronics and Telecommunication Research Institute, (ETRI)
Won-Jae LeeDong-Eui University
Kyu-Jeong ChoiChungnam National University
Soon-Gil YoonChungnam National University

Films

Plasma SrTa2O6


Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

1169