Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of SrTa2O6 Thin Films Using Sr[Ta(OC2H5)5(OC2H4OCH3)]2 as Precursor

Type: Journal

Info: Journal of The Electrochemical Society, 151 (5) C292-C296 (2004)

Date: 2003-11-03

DOI: http://dx.doi.org/10.1149/1.1668906

Author Information

Name

Institution

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Electronics and Telecommunication Research Institute, (ETRI)

Dong-Eui University

Chungnam National University

Chungnam National University

Films

Deposition Temperature Range = 200-350C

0-0-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

Philips CM20

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco Autoprobe CP

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Cameca SX-51

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

VG Scientific ESCALAB 220iXL

CET, capacitance equivalent thickness

C-V, Capacitance-Voltage Measurements

HP 4194A

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4194A

Leakage Current

I-V, Current-Voltage Measurements

HP 4145B Semiconductor Parameter Analyzer

Substrates

Si(100)

Keywords

Notes

1169



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