Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
physica status solidi (a) Volume 217, Issue 21, pages 2000319, 2020
Date:
2020-08-11
DOI:
https://doi.org/10.1002/pssa.202000319

Author Information

Name Institution
Taher Abu AliGraz University of Technology
Julian PilzGraz University of Technology
Philipp SchäffnerJoanneum Research Forschungsgesellschaft GmbH
Markus KratzerMontanuniversität Leoben
Christian TeichertMontanuniversität Leoben
Barbara StadloberJoanneum Research Forschungsgesellschaft GmbH
Anna Maria CocliteGraz University of Technology

Films

Plasma ZnO

Hardware used: Custom Direct Capacitively Coupled Plasma
DEZ, diethyl zinc, ZnEt2
CAS#: 557-20-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 25-225C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000V

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000V

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: PANalytical Empyrean

Characteristic: Piezoelectric properties
Analysis: Custom
Diagnostic: Custom

Characteristic: Piezoelectric properties
Analysis: PFM Piezo Force Microscopy
Diagnostic: Asylum Research MFP-3D

Substrates

ITO
Si with native oxide

Notes

1670