Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films

Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (1) H21-H24 (2011)
Date:
2010-08-11

Author Information

Name Institution
Hyungchul KimHanyang University
Sanghyun WooHanyang University
Jaesang LeeHanyang University
Yongchan KimHanyang University
Hyerin LeeHanyang University
Ik-Jin ChoiHanyang University
Young-Do KimHanyang University
Chin-Wook ChungHanyang University
Hyeongtag JeonHanyang University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Plasma Species
Analysis: Langmuir Probe

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

SiO2

Keywords

Notes

683