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Publication Information

Title: Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films

Type: Journal

Info: Journal of The Electrochemical Society, 158 (1) H21-H24 (2011)

Date: 2010-08-11

DOI: http://dx.doi.org/10.1149/1.3511769

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Deposition Temperature = 300C

7727-37-9

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

Unknown

Thickness

TEM, Transmission Electron Microscope

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Plasma Species

OES, Optical Emission Spectroscopy

Unknown

Plasma Species

Langmuir Probe

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Flat Band Voltage Shift

C-V, Capacitance-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Leakage Current

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Breakdown Voltage

I-V, Current-Voltage Measurements

Agilent B1500A Semiconductor Device Analyzer

Substrates

SiO2

Keywords

Notes

683


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