Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films
Type:
Journal
Info:
Journal of The Electrochemical Society, 158 (1) H21-H24 (2011)
Date:
2010-08-11
Author Information
| Name | Institution |
|---|---|
| Hyungchul Kim | Hanyang University |
| Sanghyun Woo | Hanyang University |
| Jaesang Lee | Hanyang University |
| Yongchan Kim | Hanyang University |
| Hyerin Lee | Hanyang University |
| Ik-Jin Choi | Hanyang University |
| Young-Do Kim | Hanyang University |
| Chin-Wook Chung | Hanyang University |
| Hyeongtag Jeon | Hanyang University |
Films
Plasma HfO2
Hardware used: Custom Direct Capacitively Coupled Plasma
CAS#: 7727-37-9
CAS#: 352535-01-4
CAS#: 7782-44-7
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Plasma Species
Analysis: Langmuir Probe
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage Shift
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| SiO2 |
Notes
| 683 |