Publication Information

Title: Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide

Type: Journal

Info: Electrochemical and Solid-State Letters, 5 (6) C64-C66 (2002)

Date: 2002-02-22

DOI: http://dx.doi.org/10.1149/1.1475199

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Genitech Co., Ltd.

Korea Advanced Institute of Science and Technology

Films

Deposition Temperature = 165C

1271-28-9

7732-18-5

1333-74-0

Deposition Temperature = 165C

1271-28-9

7732-18-5

Deposition Temperature = 165C

1271-28-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

-

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

-

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

-

Adhesion

Scotch Tape Test

-

Substrates

TiN

Keywords

Notes

Direct NiCp2 + H2 plasma resulted in non-metallic powder

1187



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