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Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 5 (6) C64-C66 (2002)
Date:
2002-02-22
DOI:
http://dx.doi.org/10.1149/1.1475199

Author Information

Name Institution
Junghun ChaeKorea Advanced Institute of Science and Technology
Hyoung-Sang ParkGenitech Co., Ltd.
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Other Ni

Hardware used: Custom Direct Capacitively Coupled Plasma
Bis(cyclopentadienyl)nickel, Nickelocene, Cp2Ni
CAS#: 1271-28-9
H2O, Water
CAS#: 7732-18-5
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 165C

Thermal NiOx

Hardware used: Custom Direct Capacitively Coupled Plasma
Bis(cyclopentadienyl)nickel, Nickelocene, Cp2Ni
CAS#: 1271-28-9
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 165C

Plasma Ni

Hardware used: Custom Direct Capacitively Coupled Plasma
Bis(cyclopentadienyl)nickel, Nickelocene, Cp2Ni
CAS#: 1271-28-9
H2, Hydrogen
CAS#: 1333-74-0
Deposition Temperature = 165C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Adhesion
Analysis: Tape Test
Diagnostic: -

Substrates

TiN

Notes

Direct NiCp2 + H2 plasma resulted in non-metallic powder
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