Publication Information

Title: Atomic Layer Deposition of Nickel by the Reduction of Preformed Nickel Oxide

Type: Journal

Info: Electrochemical and Solid-State Letters, 5 (6) C64-C66 (2002)

Date: 2002-02-22

DOI: http://dx.doi.org/10.1149/1.1475199

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Genitech Co., Ltd.

Korea Advanced Institute of Science and Technology

Films

Deposition Temperature = 165C

1271-28-9

7732-18-5

1333-74-0

Deposition Temperature = 165C

1271-28-9

7732-18-5

Deposition Temperature = 165C

1271-28-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

TEM, Transmission Electron Microscope

Unknown

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

Unknown

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Chemical Binding

XPS, X-ray Photoelectron Spectroscopy

Unknown

Adhesion

Scotch Tape Test

Unknown

Substrates

TiN

Keywords

Notes

Direct NiCp2 + H2 plasma resulted in non-metallic powder

1187



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