Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc

Type:
Journal
Info:
Chem. Vap. Deposition 2009, 15, 15--20
Date:
2008-09-22

Author Information

Name Institution
Pieter RowletteColorado School of Mines
Cary G. AllenColorado School of Mines
Olivia B. BromleyColorado School of Mines
Amy E. DubetzColorado School of Mines
Colin A. WoldenColorado School of Mines

Films

Plasma ZnO


Film/Plasma Properties

Characteristic: Gas Phase Species
Analysis: QMS, Quadrupole Mass Spectrometer

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Refractive Index
Analysis: Ellipsometry

Characteristic: Chemical Composition, Impurities
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Substrates

Silicon

Notes

753