Publication Information

Title: Plasma-Enhanced Atomic Layer Deposition of Semiconductor Grade ZnO Using Dimethyl Zinc

Type: Journal

Info: Chem. Vap. Deposition 2009, 15, 15--20

Date: 2008-09-22

DOI: http://dx.doi.org/10.1002/cvde.200806725

Author Information

Name

Institution

Colorado School of Mines

Colorado School of Mines

Colorado School of Mines

Colorado School of Mines

Colorado School of Mines

Films

Deposition Temperature Range = 25-120C

544-97-8

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Gas Phase Species

QMS, Quadrupole Mass Spectrometer

Stanford Research Systems RGA-200

Thickness

Ellipsometry

J.A. Woollam

Refractive Index

Ellipsometry

J.A. Woollam

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Nicolet Nexus 870

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Kratos Axis

Chemical Composition, Impurities

EDS, EDX, Energy Dispersive X-ray Spectroscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Siemens Kristalloflex 810

Morphology, Roughness, Topography

SEM, Scanning Electron Microscopy

JEOL JSM-7000F

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Digital Instruments Nanoscope III

Resistivity, Sheet Resistance

Hall Measurements

Accent HL5500

Photoluminescence

PL, PhotoLuminescence

Custom

Substrates

Silicon

Keywords

Notes

753



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