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Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 59, No. 5, pp. 3074-3079
Date:
2011-11-15
Author Information
| Name | Institution |
|---|---|
| Kwang-Man Lee | Jeju National University |
| Chang Young Kim | Jeju National University |
| Chi Kyu Choi | Jeju National University |
| R. Navamathavan | Chonbuk National University |
Films
Plasma SiCOH
Film/Plasma Properties
Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Bonding States
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
| Si(100) |
Notes
| Plasma on during precursor pulse. Not really ALD. |
| 1442 |