Publication Information

Title:
Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 59, No. 5, pp. 3074-3079
Date:
2011-11-15

Author Information

Name Institution
Kwang-Man LeeJeju National University
Chang Young KimJeju National University
Chi Kyu ChoiJeju National University
R. NavamathavanChonbuk National University

Films

Plasma SiCOH


Film/Plasma Properties

Characteristic: Electron Density, ne
Analysis: Langmuir Probe

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Bonding States
Analysis: FTIR, Fourier Transform InfraRed spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

Plasma on during precursor pulse. Not really ALD.
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