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Characteristics of SiOC(-H) Thin Films Prepared by Using Plasma-enhanced Atomic Layer Deposition

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 59, No. 5, pp. 3074-3079
Date:
2011-11-15
DOI:
https://doi.org/10.3938/jkps.59.3074

Author Information

Name Institution
Kwang-Man LeeJeju National University
Chang Young KimJeju National University
Chi Kyu ChoiJeju National University
R. NavamathavanChonbuk National University

Films

Plasma SiCOH

Hardware used: Custom Direct Capacitively Coupled Plasma
TMS, trimethylsilane, Me3SiH
CAS#: 993-07-7
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Electron Density, ne
Analysis: Langmuir Probe
Diagnostic: Wiseprobe 2000

Characteristic: Electron Temperature, Te
Analysis: Langmuir Probe
Diagnostic: Wiseprobe 2000

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: SM 320

Characteristic: Bonding States
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Bruker IFS-120HR/FRA-106S

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4280A

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4280A

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4140

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4140

Substrates

Si(100)

Notes

Plasma on during precursor pulse. Not really ALD.
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