Thermodynamic properties and interfacial layer characteristics of HfO2 thin films deposited by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Applied Physics Letters 90, 222101 (2007)
Date:
2007-05-04
DOI:
http://dx.doi.org/10.1063/1.2743749

Author Information

Name Institution
Inhoe KimHanyang University
Seoungwoo KukHanyang University
Seokhoon KimHanyang University
Jinwoo KimHanyang University
Hyeongtag JeonHanyang University
Min Hyun ChoKorea Research Institute of Standards and Science (KRISS)
K.-B. ChungKorea Research Institute of Standards and Science (KRISS)

Films

Plasma HfO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TDEAHf, (Et2N)4Hf, [(C2H5)2N]4Hf, Tetrakis(DiEthylAmido) Hafnium, Hafnium Diethylamide
CAS#: 19824-55-6
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: MEIS, Medium Energy Ion Scattering
Diagnostic: -

Substrates

Si(100)

Notes

1333