Remote Plasma-Enhanced Atomic-Layer Deposition of TiN by Using TDMAT with a NH3 Plasma

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 45, No. 6, pp. 1639-1643
Date:
2004-08-03
DOI:
http://www.jkps.or.kr/journal/download_pdf.php?spage=1639&volume=45&number=6

Author Information

Name Institution
Ju Youn KimHanyang University
Do Youl KimHanyang University
Hee Ok ParkHanyang University
Hyeongtag JeonHanyang University

Films

Plasma TiN

Hardware used: Custom Direct Capacitively Coupled Plasma
TDMATi, tetrakis(dimethylamido)titanium, titanium dimethylamide, (Me2N)4Ti
CAS#: 3275-24-9
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Where to buy precursor
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: PHI 680 FEAES

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

SiO2

Notes

1241