Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition

Type:
Journal
Info:
Plasma Chemistry and Plasma Processing 2015 pp 1-13
Date:
2015-10-20
DOI:
http://dx.doi.org/10.1007/s11090-015-9677-y

Author Information

Name Institution
M. HurKorea Institute of Machinery and Materials
D. J. KimKorea Institute of Machinery and Materials
W. S. KangKorea Institute of Machinery and Materials
J. O. LeeKorea Institute of Machinery and Materials
Y.-H. SongKorea Institute of Machinery and Materials
S. J. KimKorea Advanced Institute of Science and Technology
I. D. KimKorea Advanced Institute of Science and Technology

Films

Plasma Al2O3

Hardware used: Custom Direct Capacitively Coupled Plasma
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Thickness
Analysis: -
Diagnostic: -

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

493