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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Plasma Chemistry and Plasma Processing 2015 pp 1-13
Date:
2015-10-20
Author Information
| Name | Institution |
|---|---|
| M. Hur | Korea Institute of Machinery and Materials |
| D. J. Kim | Korea Institute of Machinery and Materials |
| W. S. Kang | Korea Institute of Machinery and Materials |
| J. O. Lee | Korea Institute of Machinery and Materials |
| Y.-H. Song | Korea Institute of Machinery and Materials |
| S. J. Kim | Korea Advanced Institute of Science and Technology |
| I. D. Kim | Korea Advanced Institute of Science and Technology |
Films
Plasma Al2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: -
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Substrates
| Silicon |
Keywords
Notes
| 493 |