Publication Information

Title:
Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (5) F34-F37 (2006)
Date:
2006-01-08

Author Information

Name Institution
Pan Kwi ParkKorea Advanced Institute of Science and Technology
Jae-Sung RohHynix Semiconductor
Byung Ho ChoiKumoh National Institute of Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Wet Etch Resistance
Analysis: Custom

Substrates

Si(100)

Keywords

Plasma vs Thermal Comparison

Notes

1311