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Interfacial Layer Properties of HfO2 Films Formed by Plasma-Enhanced Atomic Layer Deposition on Silicon

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 9 (5) F34-F37 (2006)
Date:
2006-01-08
DOI:
http://dx.doi.org/10.1149/1.2183887

Author Information

Name Institution
Pan Kwi ParkKorea Advanced Institute of Science and Technology
Jae-Sung RohHynix Semiconductor
Byung Ho ChoiKumoh National Institute of Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma HfO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 250C

Thermal HfO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 250C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: Gaertner L116C

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Interfacial Layer
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Diagnostic: -

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Keithley 590 CV Analyzer

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: HP 4145B Semiconductor Parameter Analyzer

Characteristic: Wet Etch Resistance
Analysis: Custom
Diagnostic: Custom

Substrates

Si(100)

Notes

1311