Multiscale modeling for SiO2 atomic layer deposition for high-aspect-ratio hole patterns

Type:
Journal
Info:
Japanese Journal of Applied Physics 57, 06JB03 (2018)
Date:
2018-03-15
DOI:
http://dx.doi.org/10.7567/jjap.57.06jb03

Author Information

Name Institution
Yumiko MiyanoToshiba Memory Corporation
Ryota NarasakiToshiba Memory Corporation
Takashi IchikawaToshiba Memory Corporation
Atsushi FukumotoToshiba Memory Corporation
Fumiki AisoToshiba Memory Corporation
Naoki TamaokiToshiba Memory Corporation

Films

Plasma SiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
BDEAS, SAM-24, Bis(diethylamino)silane, (Et2N)2SiH2
CAS#: 27804-64-4
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 75C

Film/Plasma Properties

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Silicon

Notes

1431