Publication Information

Title:
GeSbTe deposition for the PRAM application
Type:
Journal
Info:
Applied Surface Science 253 (2007) 3969 - 3976
Date:
2006-08-24

Author Information

Name Institution
Junghyun LeeSamsung Advanced Institute of Technology
Sangjoon ChoiSamsung Advanced Institute of Technology
Changsoo LeeSamsung Advanced Institute of Technology
Yoonho KangSamsung Advanced Institute of Technology
Daeil KimUniversity of Ulsan

Films


Plasma Ge

Hardware used: Custom Direct Plasma


CAS#: 1333-74-0

Plasma Sb


Plasma Sb

Hardware used: Custom Direct Plasma


CAS#: 1333-74-0

Plasma Te

Hardware used: Custom Direct Plasma


CAS#: 1333-74-0


Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: ICPMS, Inductively Coupled Plasma Mass Spectrometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Compositional Depth Profiling
Analysis: Four-point Probe

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Substrates

SiO2

Keywords

Phase Change Memory

Notes

1323