Publication Information

Title: GeSbTe deposition for the PRAM application

Type: Journal

Info: Applied Surface Science 253 (2007) 3969 - 3976

Date: 2006-08-24

DOI: https://doi.org/10.1016/j.apsusc.2006.08.044

Author Information

Name

Institution

Samsung Advanced Institute of Technology

Samsung Advanced Institute of Technology

Samsung Advanced Institute of Technology

Samsung Advanced Institute of Technology

University of Ulsan

Films

Deposition Temperature Range = 200-325C

7344-40-3

1333-74-0

Deposition Temperature Range = 200-400C

0-0-0

1333-74-0

Deposition Temperature Range = 200-325C

7289-92-1

1333-74-0

Deposition Temperature Range = 200-400C

0-0-0

1333-74-0

Deposition Temperature Range = 200-375C

51112-72-2

1333-74-0

Deposition Temperature Range = 250-350C

7344-40-3

7289-92-1

51112-72-2

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

SEM, Scanning Electron Microscopy

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Chemical Composition, Impurities

ICPMS, Inductively Coupled Plasma Mass Spectrometry

-

Resistivity, Sheet Resistance

Four-point Probe

-

Compositional Depth Profiling

Four-point Probe

-

Microstructure

TEM, Transmission Electron Microscope

-

Images

TEM, Transmission Electron Microscope

-

Substrates

SiO2

Keywords

Phase Change Memory

Notes

1323



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