The publication database currently has 1700 entries.
Use Advanced Search for more complex searches
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
GeSbTe deposition for the PRAM application
Type:
Journal
Info:
Applied Surface Science 253 (2007) 3969 - 3976
Date:
2006-08-24
Author Information
| Name | Institution |
|---|---|
| Junghyun Lee | Samsung Advanced Institute of Technology |
| Sangjoon Choi | Samsung Advanced Institute of Technology |
| Changsoo Lee | Samsung Advanced Institute of Technology |
| Yoonho Kang | Samsung Advanced Institute of Technology |
| Daeil Kim | University of Ulsan |
Films
Plasma Ge
Plasma Ge
Plasma Sb
Plasma Sb
Plasma Te
Plasma GeSbTe
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: ICPMS, Inductively Coupled Plasma Mass Spectrometry
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Compositional Depth Profiling
Analysis: Four-point Probe
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Substrates
| SiO2 |
Notes
| 1323 |