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Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection

Type:
Journal
Info:
Japanese Journal of Applied Physics 59, SMMB01 (apr)
Date:
2020-04-08
DOI:
https://doi.org/10.35848/1347-4065/ab87f4

Author Information

Name Institution
Jinhan SongTokyo Institute of Technology
Y. LinTokyo Institute of Technology
T. HoshiiTokyo Institute of Technology
H. WakabayashiTokyo Institute of Technology
K. TsutsuiTokyo Institute of Technology
K. KakushimaTokyo Institute of Technology

Films

Plasma Y2O3

Hardware used: Custom Remote
Y(iPrCp)3, Yttrium tris(isopropylcyclopentadienyl)
CAS#: 130206-63-2
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Diagnostic: -

Substrates

Si(100)

Notes

1517