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Atomic layer deposition of Y2O3 thin films with a high growth per cycle by Ar multiple boost injection
Type:
Journal
Info:
Japanese Journal of Applied Physics 59, SMMB01 (apr)
Date:
2020-04-08
Author Information
| Name | Institution |
|---|---|
| Jinhan Song | Tokyo Institute of Technology |
| Y. Lin | Tokyo Institute of Technology |
| T. Hoshii | Tokyo Institute of Technology |
| H. Wakabayashi | Tokyo Institute of Technology |
| K. Tsutsui | Tokyo Institute of Technology |
| K. Kakushima | Tokyo Institute of Technology |
Films
Plasma Y2O3
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry
Substrates
| Si(100) |
Notes
| 1517 |