Publication Information

Title: Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes

Type: Journal

Info: Journal of The Electrochemical Society, 152(1) G29-G34 (2005)

Date: 2004-11-17

DOI: http://dx.doi.org/10.1149/1.1825913

Author Information

Name

Institution

Hanyang University

Hanyang University

Hanyang University

Hanyang University

Films

Plasma TiN using Custom

Deposition Temperature Range N/A

3275-24-9

7727-37-9

Plasma TiN using Custom

Deposition Temperature Range N/A

3275-24-9

1333-74-0

Plasma TiN using Custom

Deposition Temperature Range N/A

3275-24-9

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Compositional Depth Profiling

AES, Auger Electron Spectroscopy

PHI 680 FEAES

Thickness

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Conformality, Step Coverage

SEM, Scanning Electron Microscopy

Unknown

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

SiO2 pirahna cleaned.

Samples annealed at 450, 500, and 550C for one hour. 450 and 500C annealed samples remained amorphous. 550C annealed sample crystallized.

Hole sidewall and top surface have same C impurity % for PEALD films. MOCVD film with post-dep plasma treatment had higher %C on hole sidewalls compared to top surface.

93



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