Publication Information

Title:
Characteristics and Compositional Variation of TiN Films Deposited by Remote PEALD on Contact Holes
Type:
Journal
Info:
Journal of The Electrochemical Society, 152(1) G29-G34 (2005)
Date:
2004-11-17

Author Information

Name Institution
Ju Youn KimHanyang University
Do Youl KimHanyang University
Hee Ok ParkHanyang University
Hyeongtag JeonHanyang University

Films




Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

SiO2 pirahna cleaned.
Samples annealed at 450, 500, and 550C for one hour. 450 and 500C annealed samples remained amorphous. 550C annealed sample crystallized.
Hole sidewall and top surface have same C impurity % for PEALD films. MOCVD film with post-dep plasma treatment had higher %C on hole sidewalls compared to top surface.
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